diffusion length

Using the metal-semiconductor contact model, the calculation formulas are derived. The diffusion length of minority carrier, interface recombination speed and heterojunction barrier width are calculated.

采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。

The results show that in order to get large photo current, ( 1) window layer should be thin and its diffusion length should be three times larger than its thickness;

结果表明，要得到大的光生电流，窗口层应很薄（W P~+

At the same flow rate of ethanol, flame length and flame width of confined jet diffusion flame were all smaller than that of free jet diffusion flame.

结果表明，自由射流扩散火焰呈椭球状，受限射流扩散火焰呈圆锥状。

Fast reading minority carrier diffusion length by SPV method

表面光电压法直读少子扩散长度

Ambipolar Diffusion Length in Semi insulating GaAs

半绝缘GaAs中的双极扩散长度

Determination of minority carrier diffusion length by EBIC for InSb multi-element arrays

用EBIC测量InSb多元探测器少子扩散长度

A method for the extraction of diffusion length and surface recombination velocity of gap from EBIC line scan

EBIC测定GaP的少子扩散长度和表面复合速度